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 DISCRETE SEMICONDUCTORS
DATA SHEET
M3D171
BLV2045N UHF power transistor
Preliminary specification Supersedes data of 1999 May 01 2000 Feb 21
Philips Semiconductors
Preliminary specification
UHF power transistor
FEATURES * Emitter ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability * Internal input and output matching for an easy design of wideband circuits. APPLICATIONS * Common emitter class-AB operation in PCN and PCS applications in the 1800 to 2000 MHz frequency range. DESCRIPTION
2
BLV2045N
PINNING - SOT390A PIN 1 2 3 SYMBOL c b e base emitter, connected to flange DESCRIPTION collector
handbook, halfpage
1
3
NPN silicon planar UHF power transistor in a 2-lead SOT390A flange package with a ceramic cap. The emitter is connected to the flange.
Top view
MSA470
Fig.1 Simplified outline.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 1990 f1 = 1990.0; f2 = 1990.1 VCE (V) 26 26 PL (W) 35 35 (PEP) Gp (dB) typ. 9.5 9.5 C (%) typ. 43 33 dim (dBc) - -30
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature operating junction temperature Tmb = 25 C CONDITIONS open emitter open base open collector - - - - - - -65 - WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2000 Feb 21 2 MIN. MAX. 65 27 3 4 4 125 +150 200 UNIT V V V A A W C C
Philips Semiconductors
Preliminary specification
UHF power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS PL = 35 W; C = 40%; Tmb = 25 C
BLV2045N
VALUE 1.4 0.4
UNIT K/W K/W
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Capacitance of die only. APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 1990 f1 = 1990.0; f2 = 1990.1 VCE (V) 26 26 ICQ (mA) 150 150 PL (W) 35 35 (PEP) Gp (dB) typ. 9.5 9.5 typ. 10.2 C (%) typ. 43 33 typ. 35 dim (dBc) - -30 typ. -32 PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 20 mA open collector; IE = 40 mA VCE = 26 V; VBE = 0 VCE = 10 V; IC = 2 A VCB = 26 V; IE = ie = 0; f = 1 MHz; note 1 VCE = 26 V; IC = 0; f = 1 MHz MIN. 65 27 3 - 45 - - - - - - - t.b.f. t.b.f. TYP. MAX. - - - 4 100 - - pF pF UNIT V V V mA
collector-emitter breakdown voltage open base; IC = 60 mA
Ruggedness in class-AB operation The BLV2045N is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: f1 = 1990.0 MHz; f2 = 1990.1 MHz; VCE = 26 V; ICQ = 150 mA; PL = 35 W (PEP); Tmb = 25 C.
2000 Feb 21
3
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
handbook, halfpage
12
MCD881
Gp
60 C (%) 50
handbook, halfpage
12
MCD882
Gp
60 C (%) 50
Gp (dB) 8 C
Gp (dB) 8
40
40
30 C
30
4
20
4
20
10
10
0 0 10 20 30 PL (W) 40
0
0 0 10 20 30 40 PL (PEP) (W)
0
VCE = 26 V; ICQ = 150 mA; f1 = 1990 MHz; f2 = 1990.1 MHz VCE = 26 V; ICQ = 150 mA; f = 1990 MHz.
Fig.3 Fig.2 Power gain and collector efficiency as functions of load power; typical values.
Power gain and collector efficiency as functions of peak envelope load power; typical values.
handbook, halfpage
0
MCD883
dim (dBc) -20 d3
-40
d5
-60
0
10
20
30 40 PL (PEP) (W)
VCE = 26 V; ICQ = 150 mA; f1 = 1990 MHz; f2 = 1990.1 MHz.
Fig.4
Intermodulation distortion as a function of peak envelope load power; typical values.
2000 Feb 21
4
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
R1 handbook, full pagewidth Vbb C8 C9 C10 C11
L7
L13 VCC C13 L12 C12 L6 L4 L5 L8 L10 L9 C14 C15 C16
L2 50 input C1 L1 C2
L11 C7 50 output
L3
C3
C4 C5
C6
MCD884
Dimensions in mm. The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Class-AB test circuit for 1990 MHz.
2000 Feb 21
5
Philips Semiconductors
Preliminary specification
UHF power transistor
List of components (see Figs 5 and 6) COMPONENT C1 C2, C7 C3 C4 C5 C6 C8, C14 C9, C10, C11, C15, C16 C12, C13 L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 L12 L13 R1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 100B or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board: r = 6.15; thickness 0.64mm. DESCRIPTION Tekelec variable capacitor; type AT37281 multilayer ceramic chip capacitor; note1 multilayer ceramic chip capacitor; note 2 multilayer ceramic chip capacitor; note 2 Tekelec variable capacitor; type AT37271 multilayer ceramic chip capacitor; note 2 tantalum SMD capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor; note 2 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 5 turns enamelled 1 mm copper wire EMI filter; type NFM61RH20T332 stripline; note 3 stripline; note 3 stripline; note 3 stripline; note 3 2 turns enamelled 1 mm copper wire EMI filter; type NFM60RH20T152 chip resistor VALUE 0.4 to 2.5 pF 30 pF 2.4 pF 1.8 pF 0.6 to 4.5 pF 1.3 pF 35 V; 10 F 100 nF 20 pF 50 20.5 29.8 11 13.2
BLV2045N
DIMENSIONS
8 x 1 mm 2.5 x 3.5 mm 5.6 x 2.1 mm 2.0 x 7.4 mm 7.2 x 6.0 mm int. dia. = 3.3 mm; length = 6 mm 6.6 x 7.1 mm 6.4 x 12.6 mm 9.9 x 1.6 mm 2.7 x 5.4 mm int. dia. = 3.3 mm; length = 2.5 mm
3300 pF 11.5 6.9 35.8 14.4
1500 pF 2.2
2000 Feb 21
6
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
handbook, full pagewidth
30
30
40
PH98058-inp
PH98058-out
Vb C10 C9 R1 C12 C8 L5 C3 C1 C2 C4 C11 L6 L12 C13 C14 L11 C15 C16
VC
C7 C6
C5
PH98058-inp
PH98058-out
MCD885
Dimensions in mm. The components are situated on one side of the copper-clad board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.6 Printed-circuit board and component layout for class-AB broadband test circuit.
2000 Feb 21
7
Philips Semiconductors
Preliminary specification
UHF power transistor
BLV2045N
handbook, halfpage
4
MCD886
handbook, halfpage
6
MCD887
Zi () 3
ri
ZL () 4 ZL
2
xi
2
1
0
XL
0 1800
1850
1900
1950 f (MHz)
2000
-2 1800
1850
1900
1950 f (MHz)
2000
VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 C.
VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 C.
Fig.7
Input impedance as a function of frequency (series components); typical values.
Fig.8
Load impedance as a function of frequency (series components); typical values.
handbook, halfpage
12
MCD888
60 C (%) 50
Gp (dB)
Gp C
8
40
30
dbook, halfpage
4
20
10
Zi ZL
MBA451
0 1800
1850
1900
1950 f (MHz)
0 2000
VCE = 26 V; ICQ = 150 mA; PL = 35 W; Tmb = 25 C.
Fig.9
Power gain and collector efficiency as functions of frequency; typical values.
Fig.10 Definition of transistor impedance.
2000 Feb 21
8
Philips Semiconductors
Preliminary specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 2 leads
BLV2045N
SOT390A
D
A F
3
D1
U1 q C
B c
1
L
U2 E1
E
A
L
p
w1 M A M B M
2
b w2 M C M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.03 4.22 b 5.72 5.46 c 0.16 0.10 D 8.18 8.08 0.322 0.318 D1 8.26 8.00 E 6.40 6.30 E1 6.43 6.17 F 1.66 1.39 L 6.10 5.33 0.24 0.21 p 3.43 3.17 Q 2.32 2.00 q 14.22 U1 19.03 18.77 0.749 0.739 U2 6.43 6.17 w1 0.25 w2 0.51
0.198 0.225 0.006 0.166 0.215 0.004
0.325 0.252 0.253 0.065 0.315 0.248 0.243 0.055
0.135 0.091 0.560 0.125 0.079
0.253 0.010 0.020 0.243
OUTLINE VERSION SOT390A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-29
2000 Feb 21
9
Philips Semiconductors
Preliminary specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV2045N
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
2000 Feb 21
10
Philips Semiconductors
Preliminary specification
UHF power transistor
NOTES
BLV2045N
2000 Feb 21
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 69
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
603516/08/pp12
Date of release: 2000
Feb 21
Document order number:
9397 750 06763


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